Method of manufacturing semiconductor mos transistor device

ABSTRACT

A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate having a main surface is prepared. A gate dielectric layer is formed on the main surface. A gate electrode is patterned on the gate dielectric layer. The gate electrode has vertical sidewalls and a top surface. A liner is formed on the vertical sidewalls of the gate electrode. A silicon nitride spacer is formed on the liner. The main surface is then ion implanted using the gate electrode and the silicon nitride spacer as an implantation mask, thereby forming a source/drain region of the MOS transistor device in the main surface. The silicon nitride spacer is removed. A silicon nitride cap layer that borders the liner is deposited. The silicon nitride cap layer has a specific stress status.

BACKGROUND OF INVENTION

1. Field of the Invention

The present invention generally relates to the field of semiconductortransistor devices, and more particularly to a method of manufacturingsilicon nitride spacer-less semiconductor NMOS and PMOS transistordevices having improved saturation current (Idsat).

2. Description of the Prior Art

High-speed metal-oxide-semiconductor (MOS) transistor devices have beenproposed in which a strained silicon (Si) layer, which has been grownepitaxially on a Si wafer with a silicon germanium (SiGe) layer disposedtherebetween, is used for the channel area. In this type of strainedSi—FET, a biaxial tensile strain occurs in the silicon layer due to theSiGe which has a larger lattice constant than Si, and as a result, theSi band structure alters, the degeneracy is lifted, and the carriermobility increases. Consequently, using this strained Si layer for achannel area typically enables a 1.5 to 8 fold speed increase.

FIGS. 1-3 are schematic cross-sectional diagrams illustrating a priorart method of fabricating a semiconductor NMOS transistor device 10. Asshown in FIG. 1, the conventional NMOS transistor device 10 generallyincludes a semiconductor substrate generally comprising a silicon layer16 having a source 18 and a drain 20 separated by a channel region 22.The silicon layer 16 is typically a strained silicon layer formed byepitaxially growing a silicon layer on a SiGe layer (not shown).Ordinarily, the source 18 and drain 20 further border a shallow-junctionsource extension 17 and a shallow-junction drain extension 19,respectively. A thin oxide layer 14 separates a gate 12, generallycomprising polysilicon, from the channel region 22.

In the device 10 illustrated in FIG. 1, the source 18 and drain 20 areN+ regions having been doped by arsenic, antimony or phosphorous. Thechannel region 22 is generally boron doped. A silicon nitride spacer 32is formed on sidewalls of the gate 12. A liner 30, generally comprisingsilicon dioxide, is interposed between the gate 12 and the siliconnitride spacer 32. A salicide layer 42 is selectively formed on theexposed silicon surface of the device 10. Fabrication of an NMOStransistor such as the device 10 illustrated in FIG. 1 is well known inthe art and will not be discussed in detail herein.

Referring to FIG. 2, after forming the NMOS transistor device 10, asilicon nitride cap layer 46 is typically deposited thereon. As shown inFIG. 2, the silicon nitride cap layer 46 covers the salicide layer 42and the silicon nitride spacer 32. The thickness of the silicon nitridecap layer 46 is typically in the range of between 200 angstroms and 400angstroms for subsequent etching stop purposes. A dielectric layer 48such as silicon oxide or the like is deposited over the silicon nitridecap layer 46. The dielectric layer 48 is typically much thicker than thesilicon nitride cap layer 46.

Referring to FIG. 3, subsequently, conventional lithographic and etchingprocesses are carried out to form a contact hole 52 in the dielectriclayer 48 and in the silicon nitride cap layer 46. As aforementioned, thesilicon nitride cap layer 46 acts as an etching stop layer during thedry etching process to alleviate source/drain damages caused by theetchant substances.

However, prior art techniques involving the deposition of a graded SiGelayer underneath the silicon channel have several drawbacks. The SiGelayer tends to introduce defects, sometimes called threadingdislocations, in the silicon, which can impact yields significantly.Also, the graded SiGe layer is deposited across the wafer, making itharder to optimize the NMOS and PMOS transistors separately. And thesilicon germanium layer has poor thermal conductivity. Another concernwith the conventional approach is that some dopants diffuse more rapidlythrough the SiGe layer, resulting in a non-optimium diffusion profile inthe source/drain regions.

Thus, a need exists in this industry to provide an inexpensive methodfor making a MOS transistor device having improved functionality andperformance.

SUMMARY OF INVENTION

It is the primary object of the present invention to provide a method ofmanufacturing a silicon nitride spacer-less semiconductor MOS transistordevices having improved performance.

According to the claimed invention, a method of manufacturing ametal-oxide-semiconductor (MOS) transistor device is disclosed. Asemiconductor substrate having a main surface is prepared. A gatedielectric layer is formed on the main surface. A gate electrode ispatterned on the gate dielectric layer. The gate electrode has verticalsidewalls and a top surface. A liner is formed on the vertical sidewallsof the gate electrode. A silicon nitride spacer is formed on the liner.The main surface is then ion implanted using the gate electrode and thesilicon nitride spacer as an implantation mask, thereby forming asource/drain region of the MOS transistor device in the main surface.The silicon nitride spacer is removed. A silicon nitride cap layer thatborders the liner is formed on the liner. The silicon nitride cap layerhas a specific stress status.

From one aspect of the present invention, a MOS transistor device isprovided. The MOS transistor device includes a semiconductor substratehaving a main surface; a gate dielectric layer on the main surface; agate electrode on the gate dielectric layer, wherein the gate electrodehas vertical sidewalls and a top surface; a liner on the verticalsidewalls of the gate electrode; a source region in the main surface;and a drain region separated from the source region by a channel regionunder the gate electrode. The channel region is strained by a stressedsilicon nitride cap layer, which borders the liner.

Other objects, advantages and novel features of the invention willbecome more clearly and readily apparent from the following detaileddescription when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention. In the drawings:

FIGS. 1-3 are schematic cross-sectional diagrams illustrating a priorart method of fabricating a semiconductor NMOS transistor device; and

FIGS. 4-9 are schematic cross-sectional diagrams illustrating a methodof fabricating semiconductor MOS transistor devices in accordance withone preferred embodiment of the present invention.

DETAILED DESCRIPTION

Please refer to FIGS. 4-9. FIGS. 4-9 are schematic cross-sectionaldiagrams illustrating a method of fabricating semiconductor MOStransistor devices 10 and 100 in accordance with one preferredembodiment of the present invention, wherein like number numeralsdesignate similar or the same parts, regions or elements. It is to beunderstood that the drawings are not drawn to scale and are served onlyfor illustration purposes. It is to be understood that some lithographicand etching processes relating to the present invention method are knownin the art and thus not explicitly shown in the drawings.

The present invention pertains to a method of fabricating MOS transistordevices or CMOS devices of integrated circuits. A CMOS process isdemonstrated through FIGS. 4-9. As shown in FIG. 4, a semiconductorsubstrate generally comprising a silicon layer 16 is prepared, whereinregion 1 thereof is used to fabricate an NMOS device 10, while region 2is used to fabricate a PMOS device 100. According to this invention, thesemiconductor substrate may be a silicon substrate or asilicon-on-insulator (SOI) substrate, but not limited thereto. Ashallow-junction source extension 17 and a shallow-junction drainextension 19 are formed in the silicon layer 16 within the region 1. Thesource extension 17 and drain extension 19 are separated by N channel22. In region 2, likewise, a shallow-junction source extension 117 and ashallow-junction drain extension 119 are formed in the silicon layer 16and are separated by P channel 122.

A thin oxide layer 14 and 114 separate gates 12 and 112 from thechannels 22 and 122, respectively. The gates 12 and 112 generallycomprise polysilicon. The oxide layer 14 and 114 may be made of silicondioxide. However, in another case, the oxide layer 14 and 114 may bemade of high-k materials known in the art. Silicon nitride spacers 32and 132 are formed on respective sidewalls of the gates 12 and 112.Liners 30 and 130 such as silicon dioxide are interposed between thesilicon nitride spacer and the gate. The liners 30 and 130 are typicallyL shaped and have a thickness of about 30˜120 angstroms. The liners 30and 130 may further comprise an offset spacer that is known in the artand is thus omitted in the figures. An x-z coordinate is specificallydemonstrated through FIG. 4 to FIG. 9, wherein x-axis represents channeldirection between the shallow-junction source extension 17 and ashallow-junction drain extension 19, z-axis represents the directionbetween the channel and gate.

As shown in FIG. 5, after forming the silicon nitride spacers 32 and132, a mask layer 68 such as a photo resist layer is formed to mask theregion 2 only. An ion implantation process is carried out to dope N typedopant species such as arsenic, antimony or phosphorous into the siliconlayer 16, thereby forming source region 18 and drain region 20. The masklayer 68 is then stripped off.

As shown in FIG. 6, a mask layer 78 such as a photo resist layer isformed to only mask the region 1. An ion implantation process is carriedout to dope P type dopant species such as boron into the silicon layer16, thereby forming source region 118 and drain region 120. The masklayer 78 is then stripped off using methods known in the art. It is tobe understood that the sequence as set forth in FIGS. 5 and 6 may beconverse. That is, the P type doping for the region 2 may be carried outfirst, then the N type doping for the region 1. After the source/draindoping, the substrate may be subjected to an annealing and/or activationthermal process that is known in the art.

As shown in FIG. 7, a conventional salicide process is performed to forma salicide layer 42 such as nickel salicide layer on the gates 12 and122, on the exposed source regions 18 and 118 and on the exposed drainregions 20 and 120. Subsequently, the silicon nitride spacers 32 and 132are stripped away, leaving the liners 30 and 130 on the sidewallsintact. According to one preferred embodiment, phosphoric acid isemployed to remove the silicon nitride spacers 32 and 132. The presentinvention features that both the NMOS transistor device 10 and the PMOStransistor device 100 do not have silicon nitride spacers (siliconnitride spacer-less) compared to the prior art MOS transistor devices.After removing the silicon nitride spacers, approximately L shapedliners are left. However, this invention is not limited to an L shapedliner. It is to be understood that a mild etching process may be carriedout to slightly etch the liner, thereby shrinking its thickness. Inanother case, the liner may be etched away. In general, the liners 30and 130 have a thickness of about 0 to 500 angstroms.

As shown in FIG. 8, in accordance with one preferred embodiment, aconformal silicon nitride cap layer 46 is deposited on the substrate.Preferably, the silicon nitride cap layer 46 has a thickness of about30˜2000 angstroms. The silicon nitride cap layer 46 borders the liners30 and 130 on the sidewalls of the gates 12 and 122 of the NMOStransistor device 10 and the PMOS transistor device 100, respectively.The silicon nitride cap layer 46 is initially deposited in a firststress status such as a compressive-stressed status (ex. −0.1 Gpa˜−3Gpa). The silicon nitride cap layer 46 within the region 2 is thenmasked by a mask layer 88.

The exposed silicon nitride cap layer 46 within the region 1 is alteredto a second stress status that is opposite to the first stress status,i.e., a tensile-stressed status (ex. 0.1 Gpa˜3 Gpa) in this case. Bydoing this, the channel region 22 is tensile-stressed by the siliconnitride cap layer 46, while the channel region 122 is compressivelystressed by the silicon nitride cap layer 46, both in the aforesaidchannel direction (x direction or x-axis). According to the preferredembodiment, the alteration of the stress status of the exposed siliconnitride cap layer 46 within the region 1 is accomplished by using agermanium ion implantation. However, it is to be understood that thealteration of the stress status of the exposed silicon nitride cap layer46 within the region 1 may be accomplished by using other methods knownto those skilled in the art.

As shown in FIG. 9, subsequently, a dielectric layer 48 is depositedover the regions 1 and 2 on the silicon nitride cap layer 46. Thedielectric layer 48 may be made of silicon oxide, doped silicon oxide orother suitable materials such as low-k materials. According to anotherembodiment of this invention, the dielectric layer 48 is stressed. Forexample, the dielectric layer 48 within region 1 is tensile-stressed,while the dielectric layer 48 within region 2 is compressively stressed.Conventional lithographic and etching processes are then carried out toform contact holes 52 in the dielectric layer 48 and in the siliconnitride cap layer 46. The contact holes 52 communicate with thesource/drain regions of the devices 10 and 100. In another case, acontact hole may be formed to communicate with the gate electrode. Fromone aspect of the present invention, the silicon nitride cap layer 46acts as an etching stop layer during the dry etching of the contactholes 52 for alleviating surface damages caused by the etchantsubstances.

It is advantageous to use the present invention method because the NMOStransistor 10 is capped with a tensile-stressed silicon nitride caplayer and the PMOS transistor device is capped with acompressive-stressed silicon nitride cap layer. Since the siliconnitride spacers are removed, the stressed silicon nitride cap layer istherefore disposed more closer with the channels 22 and 122 of thedevices 10 and 100, respectively, resulting in improved performance interms of increased saturation current.

Those skilled in the art will readily observe that numerous modificationand alterations of the invention may be made while retaining theteachings of the invention. Accordingly, the above disclosure should beconstrued as limited only by the metes and bounds of the appendedclaims.

1. A method of manufacturing a metal-oxide-semiconductor (MOS)transistor device, comprising: providing a semiconductor substratehaving a main surface; forming a gate dielectric layer on the mainsurface; forming a gate electrode on the gate dielectric layer, whereinthe gate electrode has vertical sidewalls and a top surface; forming aliner on the vertical sidewalls of the gate electrode; forming a siliconnitride spacer on the liner; ion implanting the main surface using thegate electrode and the silicon nitride spacer as an implantation mask,thereby forming a source/drain region of the MOS transistor device inthe main surface; removing the silicon nitride spacer; and forming a caplayer that borders the liner, wherein the cap layer has a specificstress status.
 2. The method of manufacturing a MOS transistor deviceaccording to claim 1 wherein the liner is made of silicon oxide.
 3. Themethod of manufacturing a MOS transistor device according to claim 1wherein the cap layer is made of silicon nitride.
 4. The method ofmanufacturing a MOS transistor device according to claim 1 furthercomprising the step of forming a source/drain extension under the liner.5. The method of manufacturing a MOS transistor device according toclaim 1 further comprising the step of forming a salicide layer on thesource/drain region.
 6. The method of manufacturing a MOS transistordevice according to claim 1 further comprising the step of annealing thesource/drain region.
 7. The method of manufacturing a MOS transistordevice according to claim 1 wherein the cap layer has a thickness ofabout 30˜2000 angstroms.
 8. The method of manufacturing a MOS transistordevice according to claim 1 wherein the cap layer acts as an etchingstop layer during etching of a contact hole.
 9. The method ofmanufacturing a MOS transistor device according to claim 1 wherein theMOS transistor device is an NMOS transistor device and wherein the caplayer is tensile-stressed.
 10. The method of manufacturing a MOStransistor device according to claim 1 wherein the MOS transistor deviceis a PMOS transistor device and wherein the cap layer iscompressive-stressed.
 11. A metal-oxide-semiconductor (MOS) transistordevice, comprising: a semiconductor substrate having a main surface; agate dielectric layer on the main surface; a gate electrode on the gatedielectric layer, wherein the gate electrode has vertical sidewalls anda top surface; an L-shaped liner on the vertical sidewalls of the gateelectrode; a source region in the main surface; and a drain regionseparated from the source region by a channel region under the gateelectrode, wherein the source region and the drain region define achannel direction, and wherein the channel region is strained in thechannel direction by a stressed cap layer, which borders the L-shapedliner.
 12. The MOS transistor device according to claim 11 wherein theMOS transistor device is an NMOS transistor device and wherein thestressed cap layer is tensile-stressed.
 13. The MOS transistor deviceaccording to claim 11 wherein the MOS transistor device is a PMOStransistor device and wherein the stressed cap layer iscompressive-stressed.
 14. The MOS transistor device according to claim11 wherein the semiconductor substrate is silicon substrate.
 15. The MOStransistor device according to claim 11 wherein the liner comprisessilicon oxide.
 16. The MOS transistor device according to claim 11further comprising a salicide layer on the source region and the drainregion.
 17. The MOS transistor device according to claim 11 wherein thestressed cap layer has a thickness of about 30˜2000 angstroms.
 18. TheMOS transistor device according to claim 11 wherein the cap layer coversthe source region, the drain region, the liner, and the top surface ofthe gate electrode.
 19. The MOS transistor device according to claim 11wherein the cap layer is made of silicon nitride.
 20. The MOS transistordevice according to claim 11 wherein the cap layer is made of siliconoxide.
 21. The MOS transistor device according to claim 11 wherein thecap layer is further laminated by at least one dielectric layer.
 22. TheMOS transistor device according to claim 21 wherein the dielectric layeris stressed.
 23. The MOS transistor device according to claim 21 whereinthe MOS transistor device is NMOS transistor device and the dielectriclayer is tensile-stressed.
 24. The MOS transistor device according toclaim 21 wherein the MOS transistor device is PMOS transistor device andthe dielectric layer is compressive-stressed.
 25. The MOS transistordevice according to claim 11 wherein the liner has a thickness of about0 to 500 angstroms.